发明名称 Semiconductor memory device
摘要 The bit line overdrive circuit of the present invention comprises a VBLH potential generation circuit generating a bit line final potential relative to a VBLH power supply line for driving a sense amplifier, a charge adjusting capacitance C, a transistor for supplying an overdrive potential to the VBLH power supply line, and a transistor for connecting a PCS node to the VBLH power supply line. The charge pre-charged from the overdrive potential to the VBLH power supply line is shared among the capacitance of the above-noted circuit elements connected to the VBLH power supply line, the bit line capacitance, and the capacitance of a cell capacitor so as to form a VBLH power supply of a substantially one system, thereby avoiding the generation of a power supply noise caused by the power supply switching.
申请公布号 US2002031027(A1) 申请公布日期 2002.03.14
申请号 US20010935010 申请日期 2001.08.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUEMATSU YASUHIRO;KOYANAGI MASARU
分类号 G11C11/409;G11C7/12;G11C11/401;G11C11/407;G11C11/4074;G11C11/4094;(IPC1-7):G11C7/00 主分类号 G11C11/409
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