发明名称 Semiconductor device
摘要 A semiconductor device comprises an active layer of a first conductive type; a base layer of a second conductive type selectively formed on a surface region of said active layer; a source layer of the first conductive type selectively formed on a surface region of said base layer; an anode layer of the second conductive type selectively formed on a surface region of the active layer, said anode layer being spaced from said base layer; a drain layer of the first conductive type formed on a surface region between said base layer and said anode layer; a resistive layer of the first conductive type formed on a surface region between said base layer and said drain layer; and a gate electrode formed above a region of said base layer between said source layer and said active layer, a gate insulating film being disposed between said base layer and said gate electrode, wherein a source electrode is formed on the surface of the base layer and the source layer while a drain electrode is formed on the surface of the drain layer and the anode layer.
申请公布号 US2002030238(A1) 申请公布日期 2002.03.14
申请号 US20010949611 申请日期 2001.09.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKAMURA KAZUTOSHI;KAWAGUCHI YUSUKE;NAKAGAWA AKIO
分类号 H01L29/78;H01L21/8234;H01L23/62;H01L27/02;H01L27/088;H01L29/739;H01L29/76;H01L29/786;(IPC1-7):H01L29/76 主分类号 H01L29/78
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