Circuit including forward body bias from supply voltage and ground nodes

摘要

One embodiment of the invention includes a semiconductor circuit including a ground voltage node to provide a ground voltage and pFET transistors having an n-type body electrically coupled to the ground voltage node to forward body bias the pFET transistors. Another embodiment of the invention includes a semiconductor circuit including a supply voltage node to provide a supply voltage and NFET transistors having a p-type body electrically coupled to the supply voltage node to forward body bias the NFET transistors. Still another embodiment of the invention includes a semiconductor circuit including a ground voltage node to provide a ground voltage and pFET transistors having an n-type body electrically coupled to the ground voltage node to forward body bias the pFET transistors. The circuit also includes a supply voltage node to provide a supply voltage and NFET transistors having a p-type body electrically coupled to the supply voltage node to forward body bias the nFET transistors.