发明名称 Chemical mechanical polishing composition and process
摘要 A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.
申请公布号 US2002031985(A1) 申请公布日期 2002.03.14
申请号 US20010842476 申请日期 2001.04.25
申请人 APPLIED MATERIALS, INC. 发明人 WANG YUCHUN;BAJAJ RAJEEV;REDEKER FRED C.;LI SHIJIAN
分类号 B24B37/04;C09G1/02;H01L21/321;(IPC1-7):B24B1/00 主分类号 B24B37/04
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