发明名称 |
Chemical mechanical polishing composition and process |
摘要 |
A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.
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申请公布号 |
US2002031985(A1) |
申请公布日期 |
2002.03.14 |
申请号 |
US20010842476 |
申请日期 |
2001.04.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG YUCHUN;BAJAJ RAJEEV;REDEKER FRED C.;LI SHIJIAN |
分类号 |
B24B37/04;C09G1/02;H01L21/321;(IPC1-7):B24B1/00 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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