SEMICONDUCTOR DEVICE HAVING GATE ELECTRODE OF STACKED STRUCTURE INCLUDING POLYSILICON LAYER AND METAL LAYER AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention provides a semiconductor device, comprising a gate electrode of a stacked structure consisting of a polysilicon layer and a metal layer, a cap insulating film formed on the gate electrode, and a gate side wall film formed on the side wall of the gate electrode. The cap insulating film consists of an insulating film containing a silicon oxide-based layer and a silicon nitride layer and serves to protect the upper surface of the gate electrode. Further, the gate side wall film consists of an insulating film containing a silicon nitride film and a silicon oxide film and serves to protect the side surface of the gate electrode.