Semiconducting memory component has clock buffer that outputs first and second internal clock signals with lower frequency than and same frequency as external clock signal

摘要

The device has a clock buffer that receives an external clock signal and outputs a first internal clock signal with a lower frequency than the external signal and a second internal clock signal with the same frequency as the external signal, an address buffer that receives an address signal with timing control by the first internal clock signal and a data buffer for input/output of data with time control by the second internal clock signal. The device has a clock buffer (310) that receives an external clock signal (CLK) and outputs a first internal clock signal (CLK1) with a lower frequency than the external clock signal and a second internal clock signal (CLK2) with the same frequency as the external clock signal, an address buffer (320) that receives an address signal during timing control by the first internal clock signal and a data buffer (340) for input/output of data under time control by the second internal clock signal. Independent claims are also included for the following: a semiconducting memory system.