SHORT-CHANNEL SWITCHING ELEMENT AND ITS MANUFACTURING METHOD

摘要

A short-channel switching element operating according to an operating principal not causing the short-channel effect. The short-channel switching element comprises an insulating layer (11), a source (13) formed on the insulating layer (11), a drain (14) formed on the insulating layer (11) opposed to the source (13) with a small spacing (12) having a length of 20nm, silicon quantum dots (15) deposited in the small spacing (12), having a grain size of below 10nm, and serving as a channel, a second insulating layer (16) formed over the source, drain, and small spacing (12), and a gate (17) formed on the second insulating layer in the region corresponding to the small spacing. A method for manufacturing such a short-channel switching element is also disclosed.