发明名称 Sputtering apparatus and film manufacturing method
摘要 In order to form a thin film having a high aspect ratio, a space between a target within a vacuum chamber and a substrate table is enclosed by an anode electrode and earth electrodes. The anode electrode is positioned on the side of the target, and a positive voltage is applied. The earth electrodes are positioned on the side of the substrate table and are connected to earth potential. A trajectory of sputtering particles curved in the direction of flying off by the anode electrode is corrected and is made incident in a perpendicular manner to a surface of the substrate on the substrate table. The amount of sputtering particles incident to the surface of the substrate can therefore be increased and made perpendicularly incident; and a thin film of a high aspect ratio can be formed.
申请公布号 US2002029960(A1) 申请公布日期 2002.03.14
申请号 US20010939715 申请日期 2001.08.28
申请人 MORIMOTO NAOKI;KONDO TOMOYASU;NAGASHIMA HIDETO 发明人 MORIMOTO NAOKI;KONDO TOMOYASU;NAGASHIMA HIDETO
分类号 H05H1/46;C23C14/34;H01J37/34;H01L21/203;H01L21/285;(IPC1-7):C23C14/32 主分类号 H05H1/46
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