发明名称 |
Sputtering apparatus and film manufacturing method |
摘要 |
In order to form a thin film having a high aspect ratio, a space between a target within a vacuum chamber and a substrate table is enclosed by an anode electrode and earth electrodes. The anode electrode is positioned on the side of the target, and a positive voltage is applied. The earth electrodes are positioned on the side of the substrate table and are connected to earth potential. A trajectory of sputtering particles curved in the direction of flying off by the anode electrode is corrected and is made incident in a perpendicular manner to a surface of the substrate on the substrate table. The amount of sputtering particles incident to the surface of the substrate can therefore be increased and made perpendicularly incident; and a thin film of a high aspect ratio can be formed.
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申请公布号 |
US2002029960(A1) |
申请公布日期 |
2002.03.14 |
申请号 |
US20010939715 |
申请日期 |
2001.08.28 |
申请人 |
MORIMOTO NAOKI;KONDO TOMOYASU;NAGASHIMA HIDETO |
发明人 |
MORIMOTO NAOKI;KONDO TOMOYASU;NAGASHIMA HIDETO |
分类号 |
H05H1/46;C23C14/34;H01J37/34;H01L21/203;H01L21/285;(IPC1-7):C23C14/32 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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