发明名称 |
Detecting short-circuits between memory cells on wafer by measuring conductivity between contacted conductive tracks |
摘要 |
The method involves contacting adjacent memory cells (2) via separate, spaced-apart conductive tracks (1), and then measuring the conductivity between the tracks. A pair of memory cells may be contacted to a predetermined number of parallel, spaced-apart conductive tracks. An Independent claim is included for a circuit device.
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申请公布号 |
DE10044537(A1) |
申请公布日期 |
2002.03.14 |
申请号 |
DE20001044537 |
申请日期 |
2000.09.05 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
GERSTMEIER, GUENTER;MUTSCHALL, DORIS;RICHTER, FRANK;ROSSKOPF, VALENTIN;SEITZ, HELMUT |
分类号 |
G11C29/02;G11C29/50;H01L21/8242;H01L27/105;(IPC1-7):H01L21/66;H01L27/115;G11C29/00 |
主分类号 |
G11C29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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