| 摘要 |
<p>A dummy cell circuit, used in semiconductor memory capable of high-speed operation without inviting enlargement of the chip size even when using a paraelectric capacitor, includes at least one paraelectric capacitor and have a specific relation between potentials applied to its terminals. For example, in a standby mode, a first terminal of the paraelectric capacitor is precharged to a first potential higher than ground potential whereas a second terminal of the paraelectric capacitor is pre-charged to ground potential. In an active mode, the first terminal is connected to one of paired bit lines, which is a reference bit line to which data is not read-out from memory cell, and the second terminal is raised from ground potential to a second potential higher than ground potential. <IMAGE></p> |
