| 发明名称 |
Method of crystallizing a silicon layer |
| 摘要 |
<p>A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.</p> |
| 申请公布号 |
EP0651431(B1) |
申请公布日期 |
2002.03.13 |
| 申请号 |
EP19940307986 |
申请日期 |
1994.10.31 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI, HISASHI;MIYANAGA, AKIHARU;FUKUNAGA, TAKESHI;ZHANG, HONGYONG |
| 分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
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