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发明名称
TRENCH SEMICONDUCTOR DEVICE HAVING GATE OXIDE LAYER WITH MULTIPLE THICKNESSES AND PROCESSES OF FABRICATING THE SAME
摘要
申请公布号
EP1186019(A1)
申请公布日期
2002.03.13
申请号
EP20000932771
申请日期
2000.05.24
申请人
WILLIAMS, RICHARD K.;GRABOWSKI, WAYNE
发明人
GRABOWSKI, WAYNE, B.;WILLIAMS, RICHARD, K.
分类号
H01L21/336;H01L21/76;H01L21/8242;H01L29/08;H01L29/10;H01L29/423;H01L29/78;(IPC1-7):H01L21/336
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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