发明名称 Lithographic projection apparatus
摘要 <p>A lithographic projection apparatus comprising a radiation system (LA,Ex,IL) for supplying a projection beam (PB) of electromagnetic radiation in the extreme ultraviolet (EUV) range, a support structure (MT) for supporting patterning means (MA), the patterning means serving to pattern the projection beam according to a desired pattern, a substrate table (WT) for holding a substrate (W) and a projection system (PL) for projecting the patterned beam onto a target portion (C) of the substrate. A space (3) within the apparatus, which space contains a mirror (CM), is supplied with a hydrocarbon gas which forms a protective cap layer on the mirror surface. The partial pressure of the hydrocarbon gas in the space is controlled in response to variations in the background pressure in the space and/or in the reflectivity of the mirror, such that the thickness of the cap layer on the mirror remains within an acceptable range. The partial pressure of hydrocarbon may be increased in order to sputter away the cap layer and/or, if extra multilayers are provided on the mirror, the top layer(s) of the mirror, thus providing a clean mirror surface. The hydrocarbon used may be an alcohol, in which case the cap layer formed is self-terminating. &lt;IMAGE&gt;</p>
申请公布号 EP1186957(A2) 申请公布日期 2002.03.13
申请号 EP20010307428 申请日期 2001.08.31
申请人 ASML NETHERLANDS B.V.;KONINKLIJKE PHILIPS ELECTRONICS N.V. 发明人 BANINE, VADIM YEVGENYEVICH;JONKERS, JEROEN
分类号 G03F7/20;H01L21/027;(IPC1-7):G03F7/20 主分类号 G03F7/20
代理机构 代理人
主权项
地址