WET ETCH PROCESS FOR FABRICATING SEMICONDUCTOR USING ANODE WATER INCLUDING OXIDE OR CATHODE WATER INCLUDING REDUCTANT AND ANODE WATER AND CATHODE WATER USED FOR THE SAME

摘要

PURPOSE: A wet etch process for fabricating a semiconductor using anode water including an oxide or cathode water including a reductant and anode water and cathode water used for the same are provided to produce anode water including an oxide and cathode water including a reductant by using the small amount of electrolyte. CONSTITUTION: An electrolytic device(1) has an anode room(30), a cathode room(40), and an intermediate room(50). The anode room(30), the cathode room(40), and the intermediate room(50) are separated by ion-exchange films(10,20). The ion-exchange film(10) is installed in the anode room(30). The ion-exchange film(10) is formed with a negative ion-exchange film(10a) and a fluoric positive ion-exchange film(10b). The ion-exchange film(20) is installed in the cathode room(40). The ion-exchange film(20) is formed with a positive ion-exchange film(20a) and a negative ion-exchange film(20b). Pin holes are formed uniformly on the fluoric positive ion-exchange film(10b) and the negative ion-exchange film(20b). An anode electrode(60) and a cathode electrode(70) are installed in the cathode room(40). Ionized water is supplied to the anode room(30) and the cathode room(40) through the first and the second injection tubes(80,90). An electrolyte is supplied to the intermediate room(50) through the third injection tube(100). Anode water including an oxide is supplied to the first wet process device(150). Cathode water including a reductant is supplied to the second wet process device(160).