Ballistic electronic devices

摘要

An electronic device of nanometric dimensions which exhibits non-linear transistor or rectifying action comprises a region (40) fabricated to provide ballistic transport properties for electron flow, with ballistic junctions (42, 44, 46) formed in region (40), each junction exhibiting quantum states with an associated electrochemical potential and a voltage dependent transmissivity. An alternating voltage may be applied across junctions (44, 46), and a rectified voltage is developed at junction (42). Alternatively, a constant voltage may be applied to terminal (44), to modulate the characteristics of electron flow through junctions (42, 46), in a transistor-like manner. <IMAGE>