Means for measuring the offset induced by photo-conductive fets in a solid state x-ray detector

摘要

A preferred embodiment of the present invention provides a method and apparatus for correcting the offset induced by Field Effect Transistor (FET) photo-conductive effects in a solid state X-ray detector (110). The method and apparatus include reading out (140) twice as many rows (scan lines) as actually exist in the scan area (115) of the X-ray detector (110). The additional rows may be read out between the actuation of "real" scan lines on the X-ray detector. The additional row times may be used to measure the "signal" induced by FET photo-conductivity. In a preferred embodiment, the "real" rows may be actuated during odd lines, and even lines will be used to measure the signal induced by FET photo-conductivity. To correct (150) for the offset induced by photo-conductive FETs, an even row signal may be subtracted from the preceding odd row signal. The correction for the offset induced by photo-conductive FETs may occur in addition to normal offset correction.