发明名称 |
Method of forming a premetal dielectric film on a semiconductor substrate |
摘要 |
A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume ratio. Then, a low-ozone doped BPSG film is deposited over the high-ozone undoped silicon dioxide layer. The film layers are heat treated to densify the film, and then the top layer is planarized using known planarization techniques to a thickness that allows for adequate mobile-ion gettering. |
申请公布号 |
AU3701602(A) |
申请公布日期 |
2002.03.13 |
申请号 |
AU20020037016 |
申请日期 |
2001.07.18 |
申请人 |
ATMEL CORPORATION |
发明人 |
AMIT S. KELKAR;MICHAEL, D. WHITEMAN |
分类号 |
C23C16/42;H01L21/3105;H01L21/316 |
主分类号 |
C23C16/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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