METHOD FOR FABRICATING BONDED SOI WAFER IMPROVING REMOVAL CAPACITY OF METAL IMPURITIES

摘要

PURPOSE: A method for fabricating a bonded SOI(Silicon On Insulator) wafer improving removal capacity of metal impurities is provided to remove efficiently metal impurities from an upper silicon layer of a bonded SOI wafer. CONSTITUTION: An oxide layer(11) is formed on an upper portion of a donor wafer. A hydrogen ion implantation layer(22) is formed on a handle wafer(20) by using a plasma immersion ion implantation method. The donor wafer is combined with the handle wafer(20). Namely, the oxide layer(11) of the upper portion of the donor wafer is adhered to an upper portion of the handle wafer(20). An SOI wafer including the oxide layer(11) and the donor wafer(10a) is formed on the upper portion of the handle wafer(20) by cutting a part of the donor wafer adhered to the upper portion of the handle wafer(20). A micro-bubble having a dangling bond is formed by performing an annealing process. An SOI wafer is formed by polishing an upper surface of the cut donor wafer(10a).