发明名称 |
METHOD FOR REMOVAL OF SIC |
摘要 |
The present invention is related to an integrated circuit having an SiC etch stop layer fabricated using a method for removal of silicon carbide layers and in particular amorphous SiC of a substrate comprising the steps of: converting at least partly said exposed part of said carbide-silicon layer into an oxide-silicon layer by exposing said carbide-silicon layer to an oxygen containing plasma; and removing said oxide-silicon layer from said substrate. |
申请公布号 |
EP1186009(A1) |
申请公布日期 |
2002.03.13 |
申请号 |
EP20000922348 |
申请日期 |
2000.04.28 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW;DOW CORNING CORPORATION |
发明人 |
VANHAELEMEERSCH, SERGE;MEYNEN, HERMAN;DEMBOWSKI, PHILIP, DAVID |
分类号 |
H01L21/768;H01L21/306;H01L21/311;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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