| 摘要 |
PURPOSE: An anti-fuse and a method for fabricating the same are provided to operate stably an anti-fuse by distributing an electric field of a lower portion of an amorphous silicon layer between the first and the second metal layers. CONSTITUTION: An interlayer dielectric(32) is deposited on an upper portion of the first metal layer(31). A photoresist layer is applied on the interlayer dielectric(32). The photoresist layer is patterned selectively by performing an exposure process and a developing process. The first via hole is formed by etching the interlayer dielectric(32) and the first metal layer(31). The photoresist layer is removed. A photoresist layer is applied on a whole surface of the above structure. The photoresist layer is patterned by performing the exposure process and the developing process. The second via hole is formed by etching the interlayer dielectric(32). An amorphous silicon is deposited thereon. An amorphous silicon(34) is formed by performing a lithography process. An anti-fuse is completed by sputtering the second metal layer(35) on the interlayer dielectric(32).
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