| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device using an inorganic SOG film is provided to improve a gap-filling and a surface roughness of an interlayer dielectric without using a CMP(Chemical Mechanical Polishing) by using an inorganic SOG(Spin On Glass) film. CONSTITUTION: Word lines(31) having a mask insulating layer(33) and a sidewall spacer(32) are formed on a silicon substrate(30). An interlayer dielectric(35) is formed on the entire surface of the resultant structure. The silicon substrate(30) of a contact plug formation region of a cell region is exposed by selectively etching the interlayer dielectric(35). A contact plug is formed by selectively growing an epitaxial silicon layer(36) on the contact plug formation region. After removing the interlayer dielectric(35) of a peripheral region, an inorganic SOG film(38) is coated on the resultant structure and annealed.
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