| 摘要 |
A method of producing mask data for partial one-shot transfer (block) exposure suitable for fabrication of an integrated circuit such as a system LSI in small numbers, in many models and with a short turnaround time (TAT) is disclosed, in which the ratio of the block mask fabrication cost to the total production cost and TAT are further reduced. In the partial one-shot transfer exposure method, at least a part of the pattern of the integrated circuit designed by at least partially combining a plurality of basic elements is passed through one of a plurality of block patterns of the block mask, and the radiation of the pattern shaped beams are combined for exposure. When producing the mask data related to the block mask used in this exposure method, a pattern group is generated in each layer of the integrated circuit including a plurality of basic elements, the degree of frequency at which each basic element in the integrated circuit is used is analyzed, and based on the analyzed degree of frequency at which each basic element is used, a plurality of block patterns to be used are selected from a pattern group, a mask layout is determined by determining the arrangement of the selected patterns in the block mask, each pattern of the mask layout is deformed based on the process conditions, and thus the mask data indicating the shape of a plurality of block patterns is generated, while at the same time generating auxiliary information containing the arrangement of a plurality of block patterns on the block mask. |
