发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE: A semiconductor integrated circuit device is provided to improve driving speed and to reduce power consumption by using a current mirror circuit. CONSTITUTION: In a standby state, an output enable signal OE is at a low level, outputs of NAND gates(L21,L22) are at a high level and an output of an inverter(L23) is at a low level. Accordingly, two MOS transistors(MP20,MN20) constituting an output stage(L24) are both in an off-state, and an output DOUT has a high impedance. As to logic gates(L21-L23), it is sufficient to insert a switch and a resistance on the VSS side or the VCC side in accordance with the criteria stated. As to an output stage(L24).
申请公布号 KR100329862(B1) 申请公布日期 2002.03.12
申请号 KR19980013104 申请日期 1998.04.13
申请人 HITACHI, LTD. 发明人 HORIGUCHI MASASHI;ITOH KIYOO;SAKATA TAKESHI
分类号 H03K19/003;H03K19/094;H03K19/0944;H03K19/0948;(IPC1-7):H03K19/094 主分类号 H03K19/003
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