发明名称 Portable integrated switching power amplifier
摘要 A high efficiency multiple power level power amplifier has a PIN diode network that selectively associates an impedance transformation network with an interstage impedance matching network to maintain desired gain and linearity characteristics for the power amplifier at different output power levels. The PIN diode network in the off mode (high power), has a high breakdown voltage and high series resistance thereby reducing distortion components. The PIN diode network in the on mode (low power), has a low series resistance thereby reducing insertion losses.
申请公布号 US6356150(B1) 申请公布日期 2002.03.12
申请号 US20000488766 申请日期 2000.01.21
申请人 RF MICRO DEVICES, INC. 发明人 SPEARS EDWARD T.;JORGENSON JON D.;STEEL VICTOR E.;VU KHOI TAM
分类号 H03G1/00;(IPC1-7):H03G3/20 主分类号 H03G1/00
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