发明名称 Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films
摘要 A metallization structure, and associated method, for filling contact and via apertures to significantly reduce the occurrence of microvoids and provide desirable grain orientation and texture. A modified barrier structure is set forth for contact apertures, and a modified liner structure is set forth for via apertures. The metallization fill structure for contact apertures includes a first wetting or glue layer of refractory metal on the contact aperture, a layer of TiN on the first wetting layer, a second wetting layer of plasma-treated refractory metal on the barrier layer, a layer of CVD Al on the second wetting refractory metal layer, and a PVD Al alloy to fill the contact aperture. The fill structure for via apertures includes an initial plasma-treated refractory metal liner deposited on the via aperture. A CVD Al liner is positioned on the initial refractory metal liner. A PVD Al alloy layer is positioned on the CVD Al liner to fill the via aperture.
申请公布号 US6355558(B1) 申请公布日期 2002.03.12
申请号 US19990332362 申请日期 1999.06.10
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 DIXIT GIRISH;KONECNI ANTHONY
分类号 H01L21/3213;H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/3213
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