发明名称 |
Metallization structure, and associated method, to improve crystallographic texture and cavity fill for CVD aluminum/PVD aluminum alloy films |
摘要 |
A metallization structure, and associated method, for filling contact and via apertures to significantly reduce the occurrence of microvoids and provide desirable grain orientation and texture. A modified barrier structure is set forth for contact apertures, and a modified liner structure is set forth for via apertures. The metallization fill structure for contact apertures includes a first wetting or glue layer of refractory metal on the contact aperture, a layer of TiN on the first wetting layer, a second wetting layer of plasma-treated refractory metal on the barrier layer, a layer of CVD Al on the second wetting refractory metal layer, and a PVD Al alloy to fill the contact aperture. The fill structure for via apertures includes an initial plasma-treated refractory metal liner deposited on the via aperture. A CVD Al liner is positioned on the initial refractory metal liner. A PVD Al alloy layer is positioned on the CVD Al liner to fill the via aperture.
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申请公布号 |
US6355558(B1) |
申请公布日期 |
2002.03.12 |
申请号 |
US19990332362 |
申请日期 |
1999.06.10 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DIXIT GIRISH;KONECNI ANTHONY |
分类号 |
H01L21/3213;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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