| 摘要 |
PURPOSE: A method for forming a contact plug of a semiconductor device is provided to improve an EM(Electro-Migration) and a yield by easily forming a tungsten plug without generating voids in a deep via contact hole having a high aspect ratio. CONSTITUTION: An interlayer dielectric(32) is deposited on a silicon substrate(31). A deep via contact hole having a slope of 80-85 degrees is formed by etching the interlayer dielectric(32) using a middle ion density, a high ion density, an RF sputter or a micro wave flow apparatuses. A glue layer(34) composed of Ti and TiN films is formed on the deep via contact hole. After forming a tungsten film on the resultant structure, a tungsten plug is formed in the deep via contact hole by planarizing the tungsten film.
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