| 摘要 |
PROBLEM TO BE SOLVED: To provide a positive type resist composition having excellent resolution and etching resistance, capable of giving a resist pattern that undergoes a small dimensional change per unit temperature by a thermal flow process and having good aging stability. SOLUTION: The positive type resist composition contains (A) a base resin component comprising at least one hydroxystyrene copolymer having an acid dissociable group substituted for the hydrogen atom of at least part of phenolic hydroxyl groups or carboxyl groups present in the copolymer, (B) a compound which generates an acid when irradiated with radiation, (C) a crosslinkable polyvinyl ether compound, (D) a carboxylic acid consisting only of carbon, oxygen and hydrogen atoms and (E) an organic amine. |
