| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device, the storage region of which changes dynamically and can vary according to requirement specifications, can execute concurrently more than two functions out of erasure, writing and read-out. SOLUTION: The non-volatile semiconductor storage device has a group of the storage regions consisting of plural memory blocks. The semiconductor storage device can change a number of the memory blocks included in each group of the storage regions by an external command control.</p> |
