发明名称 |
Resist pattern forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed |
摘要 |
Disclosed are methods for forming a resist pattern which solve a problem caused by halation and interference phenomena due to reflected light from the substrate. A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper interference film for the exposure light and a lower film having higher exposure light absorbance than the upper film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower film that reflects exposure light and an upper film that is an interference film for the exposure light.
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申请公布号 |
US6355400(B1) |
申请公布日期 |
2002.03.12 |
申请号 |
US20010849487 |
申请日期 |
2001.05.07 |
申请人 |
HITACHI, LTD. |
发明人 |
TANAKA TOSHIHIKO;UCHINO SHOICHI;ASAI NAOKO |
分类号 |
G03F7/09;(IPC1-7):G03C1/825 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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