发明名称 |
Thin film transistor, method of producing the same, liquid crystal display, and thin film forming apparatus |
摘要 |
The invention intends to provide a TFT having a gate insulating film which has a high dielectric withstand voltage and can ensure a desired carrier mobility in an adjacent semiconductor active film. A gate electrode and a semiconductor active film are formed on a transparent substrate with a gate insulating film, which is formed of two layered insulating films, held between them. The gate insulating film is made up of a first gate insulating film which improves a withstand voltage between the gate electrode and the semiconductor active film, and a second gate insulating film which improves an interface characteristic between the gate insulating film and the semiconductor active film . The first and second gate insulating films are each formed of a SiNx film. The optical band gap of the first gate insulating film has a value in the range of 3.0 to 4.5 eV, and the optical band gap of the second gate insulating film has a value in the range of 5.0 to 5.3 eV.
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申请公布号 |
US6355943(B1) |
申请公布日期 |
2002.03.12 |
申请号 |
US19990413653 |
申请日期 |
1999.10.06 |
申请人 |
LG. PHILIPS LCD CO., LTD. |
发明人 |
SUNG CHAE GEE |
分类号 |
H01L21/316;G02F1/136;G02F1/1368;H01L21/318;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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