| 发明名称 |
Wiring structure of semiconductor device and method for manufacturing the same |
| 摘要 |
A wiring structure of a semiconductor device and a method for manufacturing the same are provided. The wiring structure according to the present invention includes a body formed of a conductive material in a first insulating film on a semiconductor substrate and a protrusion formed of a conductive material in a second insulating film formed on the first insulating film, connected to the upper surface of the body, formed to have a width less than that of the body, and having a planarized upper surface.
|
| 申请公布号 |
US6355515(B1) |
申请公布日期 |
2002.03.12 |
| 申请号 |
US19990359243 |
申请日期 |
1999.07.22 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MOON JAE-HWAN;KIM GYU-CHUL |
| 分类号 |
H01L21/3205;H01L21/28;H01L21/768;H01L21/8234;H01L21/8244;H01L27/11;(IPC1-7):H01L21/824;H01L21/76;H01L21/311 |
主分类号 |
H01L21/3205 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
