SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a method for fabricating the same are provided to form a semiconductor device by using a selective epitaxial growth method. CONSTITUTION: An insulating layer(22) is formed on a semiconductor substrate(21). A multitude of window is formed on the insulating layer(22). A multitude of epitaxial silicon layer(23) is formed on the insulating layer(22). A gate including a gate oxide layer(24) and a gate poly(25) is formed on the epitaxial silicon layer(23). A spacer(27) is formed on a sidewall of the gate poly(25). An LDD(26)(Lightly Doped Drain) is formed on the epitaxial silicon layer(23) under the spacer(27). A source/drain(28) is formed on a junction region between the LDD(26) and the epitaxial silicon layer(23). A PMD(30) is formed on the epitaxial layer(23) and the insulating layer(22). A contact hole is formed on the PMD(30). A tungsten plug(31) is formed in the contact hole. A metal line layer(32) is formed on the PMD(30). A silicide layer(29) is formed on the gate poly(25) and the source/drain(28).