发明名称 OUTPUT BUFFER CIRCUIT
摘要 PURPOSE: An output buffer circuit is provided to control tuning-on states of a PMOS transistor and an NMOS transistor by using delay portions. CONSTITUTION: A NAND gate(NAND1) performs a NAND operation for an inverted control signal(CNTR) of an inverter(INV1) and delayed data(DATA) of the first delay portion(1) and outputs a result. A NOR gate(NOR1) performs a NOR operation for the inverted control signal(CNTR) of the inverter(INV1) and delayed data(DATA) of the second delay portion(2) and outputs a result. A PMOS transistor(PM1) and an NMOS transistor(NM1) are connected between a supply power and a ground. The PMOS transistor(PM1) and the NMOS transistor(NM1) are operated and controlled according to an output signal of the NAND gate(NAND1) and an output signal of the NOR gate(NOR1). The first delay portion(1) is formed with four inverter(INV2-INV5), a NAND gate(NAND2), and an inverter(INV6). The second delay portion(2) is formed with four inverters(INV7-INV11) and a NAND gate(NAND3).
申请公布号 KR20020019232(A) 申请公布日期 2002.03.12
申请号 KR20000052395 申请日期 2000.09.05
申请人 HYNIX SEMICONDUCTOR INC. 发明人 OH, HYEONG SEOK
分类号 H03K19/0175;(IPC1-7):H03K19/017 主分类号 H03K19/0175
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