| 摘要 |
A semiconductor integrated circuit (IC) device includes a substrate, an insulating layer formed on the substrate, a buried layer formed on the insulating layer, and an epitaxial layer of a first conductivity type formed on the buried layer. A first isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds a first selected surface area of the epitaxial layer. A second isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds the first isolation trench and defines a guard ring region between itself and the first isolation trench. A collector is implanted into the epitaxial layer in the guard ring region. A contact is made to the collector, and a conductor connects the contact to a ground node. A method of forming a semiconductor IC device includes: forming a silicon-on-insulator (SOI) substrate having an insulating layer formed on a substrate; forming a buried layer on the insulating layer; forming an epitaxial layer of a first conductivity type on the buried layer; forming a first isolation trench in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds a first selected surface area of the epitaxial layer; forming a second isolation trench in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds the first isolation trench and defines a guard ring region between itself and the first isolation trench; implanting a collector into the epitaxial layer in the guard ring region; establishing a contact to the collector; and connecting the contact to a ground node.
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