| 发明名称 |
Silicon nitride film formation method |
| 摘要 |
In a silicon nitride film formation method, a substrate to be subjected to film formation is heated, and silicon tetrachloride and ammonia gases are supplied to the substrate heated to a predetermined temperature. The ratio of the partial pressure of the silicon tetrachloride gas to that of the ammonia gas is set to not less than 0.5.
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| 申请公布号 |
US6355582(B1) |
申请公布日期 |
2002.03.12 |
| 申请号 |
US20000662328 |
申请日期 |
2000.09.14 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HOSODA KEIZO;SHIGEMATSU NOBUAKI;MURAKI YUSUKE;SATO ATSUSHI |
| 分类号 |
H01L27/04;C23C16/34;H01L21/28;H01L21/318;H01L21/822;H01L21/8242;H01L27/108;H01L29/51;(IPC1-7):H01L21/31 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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