| 摘要 |
It is an object of the present invention to provide a semiconductor light emitting device capable of securing, in use of an optical information processing or an optical communication system, a low threshold and high efficiency operation as well as a high output characteristic.An active layer structure having a flatness and an interface acuteness of a quantum well structure improved by introducing a multi-period super lattice structure between a substrate for crystal growth and a light emitting layer area further to on a misoriented substrate sued to enhance a homogeneity of a semiconductor crystal. Further, a carrier confinement and a light confinement can be enhanced by providing a margin for design of the quantum well structure. According to the present invention, it is possible to realize a semiconductor laser element which can improve, as compared with a semiconductor laser device to which the present process is not applied, a threshold current and a slope efficiency, and which can achieve, as compared with an element not provided with a window structure, a high output characteristic with a maximum optical output enhanced.
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