发明名称 |
Passivation of inlaid metallization |
摘要 |
A method for forming a metal interconnect having a self-aligned transition metal-nitride barrier (124). After the metal interconnect lines (118) are formed, a transition metal (120) is deposited over the surface of the metal interconnect lines (118) and reacted in to form a metal-compound (122). The metal-compound (122) is then annealed in a nitrogen ambient to form a barrier layer (114) at the surface of the metal interconnect lines (118).
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申请公布号 |
US6355559(B1) |
申请公布日期 |
2002.03.12 |
申请号 |
US20000706275 |
申请日期 |
2000.11.03 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HAVEMANN ROBERT H.;HONG QI-ZHONG;DIXIT GIRISH |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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