发明名称 Passivation of inlaid metallization
摘要 A method for forming a metal interconnect having a self-aligned transition metal-nitride barrier (124). After the metal interconnect lines (118) are formed, a transition metal (120) is deposited over the surface of the metal interconnect lines (118) and reacted in to form a metal-compound (122). The metal-compound (122) is then annealed in a nitrogen ambient to form a barrier layer (114) at the surface of the metal interconnect lines (118).
申请公布号 US6355559(B1) 申请公布日期 2002.03.12
申请号 US20000706275 申请日期 2000.11.03
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HAVEMANN ROBERT H.;HONG QI-ZHONG;DIXIT GIRISH
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
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