| 发明名称 |
Thin film transistor for protecting source and drain metal lines |
| 摘要 |
A method for manufacturing a thin film transistor includes the step of forming a protective layer for protecting source and drain metal lines during a cleaning process. The protective layer is preferably made of silicon nitride and preferably has a thickness of less than about 2000 angstroms.
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| 申请公布号 |
US6355956(B1) |
申请公布日期 |
2002.03.12 |
| 申请号 |
US20000599599 |
申请日期 |
2000.06.23 |
| 申请人 |
LG. PHILIPS LCD CO., LTD. |
发明人 |
KIM KEE-JONG |
| 分类号 |
H01L21/336;H01L29/417;H01L29/786;(IPC1-7):H01L27/01;H01L27/12;H01L31/039 |
主分类号 |
H01L21/336 |
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