发明名称 |
BI-POTENTIAL MASK TYPE CATHODE RAY TUBE |
摘要 |
PURPOSE: A bi-potential mask type cathode ray tube is provided to prevent a getter film from being deposited inside of the skirt part in face panel by controlling a path of getter material discharged in getter flashing process. CONSTITUTION: A face panel(4) includes a skirt part extended vertically from the screen edge. A phosphor film screen(2) forms a plurality of R, G, B phosphor films inside of the face panel screen and is supplied with a predetermined high voltage. A shadow mask(12) keeps in insulation with the phosphor screen and forms an acceleration electric field between the phosphor and the shadow mask by being supplied a bi-potential. A mask frame(18) fixes the shadow mask to the skirt part in face panel. An inner shield(24) is fixed to the rear side of the mask frame and shields a path of the electron beams from the geomagnetic field. A getter(26) makes an inside of bulb high vacuum state by discharging of getter material when the getter filler is heated. A prevent unit prevents the getter film from being deposited inside of the skirt part by blocking a path of the getter material that goes from the getter to the skirt part in face panel.
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申请公布号 |
KR20020019338(A) |
申请公布日期 |
2002.03.12 |
申请号 |
KR20000052519 |
申请日期 |
2000.09.05 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
HWANG, YONG SIK;OH, TAE SIK |
分类号 |
H01J29/02;(IPC1-7):H01J29/02 |
主分类号 |
H01J29/02 |
代理机构 |
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主权项 |
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地址 |
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