发明名称 |
Method of manufacturing a capacitor in a semiconductor device |
摘要 |
The present invention discloses a method of manufacturing a capacitor in a semiconductor device which is directed to solve the problem of reduction of capacitance occurring when manufacturing a capacitor of a MIS structure using poly-silicon as an underlying electrode and metal as an upper electrode in a capacitor using Ta2O5 as a dielectric film. In order to solve the problem, the present invention forms an underlying electrode using metal having a good oxide-resistant such as TiSiN. Thus, the present invention could not only lower the thickness of the effective oxide film of Ta2O5 when depositing Ta2O5 or performing a thermal process for crystallization but also prevent increase of a leak current due to oxidization of the underlying electrode and the diffusion prevention film, thus securing the capacitance of the capacitor and improving the electric characteristic of the capacitor.
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申请公布号 |
US6355521(B1) |
申请公布日期 |
2002.03.12 |
申请号 |
US20000659509 |
申请日期 |
2000.09.11 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
CHO HO JIN |
分类号 |
H01L27/108;H01L21/02;H01L21/316;(IPC1-7):H01L21/336 |
主分类号 |
H01L27/108 |
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地址 |
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