LOW VOLTAGE DRIVE FLASH MEMORY AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A low voltage drive flash memory and a method for fabricating the same are provided to drive a flash memory under a low voltage by coupling a logic circuit with the flash memory on one chip. CONSTITUTION: A gate oxide layer(12) is formed on a predetermined region of a semiconductor substrate(11). An ion trap region(16) is formed on a corner part of the gate oxide layer(12). A floating gate(13) is formed on an upper portion of the gate oxide layer(12). A dielectric layer(14) is formed on an upper portion of the floating gate(13). A control gate(14) is formed on an upper portion of the floating gate(13). A control gate(15) is formed on an upper portion of the dielectric layer(14). A spacer(18) is formed on the gate oxide layer(12) including the ion trap region(16), the floating gate(13), the dielectric layer(14), and the control gate(15). An LDD(Lightly Doped Drain)(17) is formed on the semiconductor substrate(17) under the spacer(18). A source/drain region(19) is formed on a contact portion between the LDD(17) and the semiconductor substrate(11).