发明名称 EVALUATION METHOD FOR POLYCRYSTALLINE SILICON
摘要 PURPOSE: To provide a method, capable of effectively evaluating the degree of foreign matter contained in a raw-material polycrystalline silicon, without the need for actually pulling up single crystals. CONSTITUTION: A fixed amount of a polycrystalline silicon piece 1 is housed in a basket 2, and the cage 2 is immersed in an etching tank 4, housing an etchant 3. Then, the predetermined amount of a polycrystalline silicon piece 1 is pulled from the etching tank 4, and the etchant 3 is sampled. The sampled liquid is left standing for a fixed time and then placed in a liquid-borne particle counter 7, when all the polycrystalline silicon particles and powder have dissolved to measure the number of particles in a fixed amount of the liquid.
申请公布号 KR20020019378(A) 申请公布日期 2002.03.12
申请号 KR20010036295 申请日期 2001.06.25
申请人 MITSUBISHI MATERIALS POLYSILICON CORPORATION;MITSUBISHI MATERIALS SILICON CORPORATION 发明人 HORI KENJI;SASAKI GO
分类号 G01N23/225;C30B15/00;C30B29/06;G01N1/28;G01N15/00;G01N33/00;G01N33/20;(IPC1-7):G01N15/00 主分类号 G01N23/225
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