发明名称 SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR THIN FILM, APPARATUS FOR FABRICATING SINGLE CRYSTAL SEMICONDUCTOR THIN FILM
摘要 PURPOSE: A semiconductor thin film is provided to have a performance very higher than that of a related art polycrystalline thin film and to be suitable for fabricating a device having stable characteristics and to be fabricated for a sufficiently short time. CONSTITUTION: A method of fabricating a single crystal thin film includes the steps of: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other.
申请公布号 KR20020019418(A) 申请公布日期 2002.03.12
申请号 KR20010054334 申请日期 2001.09.05
申请人 SONY CORPORATION 发明人 MORI YOSHIFUMI;NAKAJIMA HIDEHARU;SAKAMOTO YASUHIRO;SATO JUNICHI;USUI SETSUO
分类号 H01L21/20;H01L21/324;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L21/20
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