发明名称 |
SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR THIN FILM, APPARATUS FOR FABRICATING SINGLE CRYSTAL SEMICONDUCTOR THIN FILM |
摘要 |
PURPOSE: A semiconductor thin film is provided to have a performance very higher than that of a related art polycrystalline thin film and to be suitable for fabricating a device having stable characteristics and to be fabricated for a sufficiently short time. CONSTITUTION: A method of fabricating a single crystal thin film includes the steps of: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other.
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申请公布号 |
KR20020019418(A) |
申请公布日期 |
2002.03.12 |
申请号 |
KR20010054334 |
申请日期 |
2001.09.05 |
申请人 |
SONY CORPORATION |
发明人 |
MORI YOSHIFUMI;NAKAJIMA HIDEHARU;SAKAMOTO YASUHIRO;SATO JUNICHI;USUI SETSUO |
分类号 |
H01L21/20;H01L21/324;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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