RF INTEGRATED CIRCUIT AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: An RF integrated circuit and a method for fabricating the same are provided to improve a quality factor by preventing leakage current applied to a semiconductor substrate. CONSTITUTION: A multitude of window is formed on an insulating layer(22). An epitaxial silicon layer(24) is formed on the insulating layer(22). A semiconductor device(25) is formed on the epitaxial silicon layer(24). A PMD layer(26) is formed on the epitaxial silicon layer(24) and the exposed insulating layer(22). A contact(27) is formed on the PMD layer(26). The first metal line layer(28) is formed on the PMD layer(26). An IMD layer(29) is formed on an upper portion of the first metal line layer(28). A via(30) is formed on the IMD layer(29) of a metal layer pattern of the first metal line layer(28). The second metal line layer(31) is formed on the IMD layer(29). A spiral coil(32) is formed on the second metal line layer(31). A capping layer(33) is formed on the second metal line layer(31).