| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing short between devices by removing a tungsten film remaining a stepped region. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(20) having word lines(21). A contact hole is formed by selectively etching the interlayer dielectric(22). A tungsten film is formed on the resultant structure so as to sufficiently fill in the contact hole. A tungsten plug(24) is formed by selectively removing the tungsten film. A tungsten oxide layer(23a) is formed by oxidation of the remaining tungsten film on the interlayer dielectric(22). Then, the tungsten oxide layer(23a) is removed by RF(Radio Frequency) sputtering.
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