METHOD FOR FABRICATING METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A method for fabricating a metal oxide semiconductor field effect transistor(MOSFET) is provided to reduce a leakage current and improve an insulation characteristic of a gate oxide layer by eliminating a dangling bond caused by fluorine and making a chlorine component compensate for a defect on a semiconductor substrate. CONSTITUTION: The gate oxide layer(2) is formed on the semiconductor substrate(1). A polycrystalline silicon layer(3) is formed on the gate oxide layer. A tungsten silicide layer(4) is formed on the polycrystalline silicon layer. A heat treatment process is performed on the semiconductor substrate in a chlorine gas atmosphere to eliminate a fluorine component. The tungsten silicide layer and the polycrystalline silicon layer are patterned to form a gate electrode.