发明名称 |
QUARTZ MONOCRYSTAL GROWING METHOD |
摘要 |
processes for manufacturing synthetic monocrystals of quartz and hydrothermal solutions by temperature drop process, possibly for making high quality optical quartz for optical-mechanical and radioelectronic industry branches. SUBSTANCE: method comprises steps of growing quartz monocrystals by hydrothermal process from alkaline solutions by recrystallization of quartz charge from charge container onto horizontally arranged screened seed tips at temperature drop between growing chamber and solution chamber; using multisection charge container with partitions perforated along height, each partition being bottom of next section; realizing crystal growing at screening upper and end surfaces of seed tip with gasket of steel foil between screen and seed tip; at beginning of growing cycle reducing pressure of solution by 25-40MPa at constant synthesis temperature; after termination of growing process cooling autoclave at rate (8-10)C/hour until 270C and pressure 10MPa; then finally reducing pressure of solution at the same rate of cooling until 120C; after achieving such temperature deenergizing electric heaters of autoclave. EFFECT: possibility for making high-quality optical quartz. 1 tbl
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申请公布号 |
RU2180368(C1) |
申请公布日期 |
2002.03.10 |
申请号 |
RU20010110698 |
申请日期 |
2001.04.23 |
申请人 |
"VSEROSSIJSKIJ NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT;VRNII;FEDERALNOE GUP |
发明人 |
DOROGOVIN B.A.;KHADZHI V.E.;GORDIENKO L.A.;SHVANSKIJ P.P.;BELIMENKO F.A. |
分类号 |
C30B7/10;C30B29/18;(IPC1-7):C30B7/10 |
主分类号 |
C30B7/10 |
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