METHOD FOR FORMING CONTACT HOLE AND METHOD FOR FABRICATING THIN-FILM-TRANSISTOR SUBSTRATE USING THE SAME

摘要

PURPOSE: A method for forming a contact hole is provided to omit an additional process for etching a photoresist layer pattern for broadening the upper width of the contact hole, by forming the contact hole of a step type by a technology in which the side surface of an insulation layer is etched. CONSTITUTION: The first conductive layer is formed on a substrate(10). The second conductive layer is formed on the first conductive layer. An insulation layer covering the first and second conductive layers is formed. A photoresist layer pattern defining the contact hole is formed on the insulation layer. The insulation layer is etched by using the photoresist layer pattern as a mask. The second conductive layer is over-etched by using the photoresist layer pattern as a mask. The etched insulation layer is laterally etched to expose the side surface of the over-etched second conductive layer. The photoresist layer pattern is eliminated.