发明名称 SEMICONDUCTOR DEVICE, MICROCOMPUTER, AND FLASH MEMORY
摘要 PURPOSE: To provide a semiconductor device the characteristics of which are adjustable as desired with high reliability without being affected by the variance or the like of device characteristics. CONSTITUTION: This device is provided with a replica MOS transistor 2 for measuring a current value connected to an external measuring terminal 3. A delay circuit 4 or the like giving a desirable characteristics has a constant current source MOS transistor formed by the same process as the replica MOS transistor, and trimming voltage Vtri is applied commonly to the constant current source MOS transistor and the replica MOS transistor 2. Trimming data decided based on a current value measured from the external measuring terminal 3 is stored in a storage means 13 such as a non-volatile memory being electrically rewritable. The trimming voltage Vtri is decided by the trimming data.
申请公布号 KR20020018954(A) 申请公布日期 2002.03.09
申请号 KR20010052502 申请日期 2001.08.29
申请人 HITACHI ULSI SYSTEMS CO., LTD.;HITACHI.LTD. 发明人 FUJITO MASAMICHI;HIRAKI MITSURU;SHINAGAWA YUTAKA;TAKEUCHI KAN;TANAKA TOSHIHIRO;YAMAKI TAKASHI
分类号 G11C17/00;G11C5/00;G11C7/00;G11C11/413;G11C11/56;G11C16/02;G11C16/06;G11C16/28;G11C16/30;G11C29/00;G11C29/02;G11C29/14;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;H01L31/0336;(IPC1-7):G11C16/06 主分类号 G11C17/00
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