| 摘要 |
PURPOSE: A method for reading a magneto-resistive memory is provided to record, to read and to rewrite magneto-resistive memory cells accurately and stably by arranging memory cells regardless of pitch position. CONSTITUTION: A magneto-resistive memory includes magneto-resistive memory cells(3a,b,c,d) disposed in plural rows and columns. A bit line(4a,b) is connected to first poles of the memory cells of the column. A word line(5a,b) is connected to second poles of the memory cells of the row. A read voltage source(U1) is separately connectable to first ends of the word lines. A voltage evaluator(2) has an input part separately connectable to first ends of the bit lines via an evaluation line. A first terminating resistor(R1) branches from the evaluation line. An impedance converter(1) has an input part connected to the evaluation line and has an output part separately connectable to second ends of the bit lines and word lines.
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